Ridge-Type Semiconductor Lasers with Antiguiding Layers for Horizontal Transverse Modes: Dependence on Space in the Antiguiding Layers

摘要

The dependence of lasing characteristics of ridge-type semiconductor lasers with antiguiding layers for horizontal transverse modes on the space in the antiguiding layers S is theoretically investigated. It is found that the kink level and wall-plug efficiency have peaks at S= 1.98μm. In S > 1.98μm, injected carriers are confined to the space region but spatial hole burning appears. In S < 1.98μm, injected carriers overflowed to the steps but spatial hole burning is negligible because S is shorter than the carrier diffusion length of 2 urn. With a decrease in S, the threshold current decreases, because injected carriers concentrate into the active region below the mesa.