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Young's Modulus Enhancement of Mesoporous Pure-Silica-Zeolite Low-Dielectric-Constant Films by Ultraviolet and Silylation Treatments

机译:紫外线和硅烷化处理提高中孔纯硅沸石低介电常数薄膜的杨氏模量

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摘要

A Young's modulus as high as 10 GPa and a dielectric constant of 2.18 was obtained by post-deposition ultraviolet and silylation treatments of a mesoporous pure-silica-zeolite low-dielectric-constant (low-k) film, while the dielectric constant value k after the treatments remained as low as 2.18. Spin-on zeolite suspension was calcined at 400 ℃, and a silylation treatment using 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) was then carried out. The film was irradiated with UV light with a wavelength of 254 nm followed by a second silylation treatment. After these treatments, an increased H-Si-O_3 stretching peak and reduced OH-related peak in the infrared absorption spectra were observed, indicating the formation of a thicker Si-O polymer network with methyl groups on the pore wall surface.
机译:通过介孔纯硅沸石低介电常数(low-k)薄膜的沉积后的紫外线和甲硅烷基化处理,获得了高达10 GPa的杨氏模量和2.18的介电常数,而介电常数值为k治疗后仍低至2.18。将旋涂沸石悬浮液在400℃下煅烧,然后使用1,3,5,7-四甲基环四硅氧烷(TMCTS)进行甲硅烷基化处理。用波长为254nm的UV光照射该膜,然后进行第二次甲硅烷基化处理。经过这些处理后,在红外吸收光谱中观察到了H-Si-O_3拉伸峰的增加和OH相关峰的减少,这表明在孔壁表面形成了带有甲基的较厚的Si-O聚合物网络。

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  • 来源
    《Japanese journal of applied physics》 |2009年第5issue1期|050210.1-050210.3|共3页
  • 作者单位

    Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan Electron Device Laboratory, Fujikura Ltd., Sakura, Chiba 285-8550, Japan;

    Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan;

    Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan;

    Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan;

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