机译:极光中30 nm半节距结构的集成度和介电可靠性LK HM
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
rnIMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
rnIMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
rnIMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
rnIMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
rnIMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
rnIMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
rnIMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
rnIMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
rnIMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
rnIMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
rnIMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
rnASM Belgium, Kapeldreef 75, B-3001, Belgium;
rnASM Belgium, Kapeldreef 75, B-3001, Belgium;
rnASM Belgium, Kapeldreef 75, B-3001, Belgium;
rnIMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
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机译:使用新型PECVD多孔低k介电膜的90 nm世代Cu / LK(k = 2.5)大马士革的基本面,集成度和可靠性
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