首页> 外文期刊>Japanese journal of applied physics >Preparation and Characterization of (Ba_0.8Sr_0.2)TiO_3-Al_2O_3 Composite Oxide for Thin Film Capacitor
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Preparation and Characterization of (Ba_0.8Sr_0.2)TiO_3-Al_2O_3 Composite Oxide for Thin Film Capacitor

机译:薄膜电容器用(Ba_0.8Sr_0.2)TiO_3-Al_2O_3复合氧化物的制备与表征

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摘要

Barium strontium titanate—alumina composites were fabricated using a sol—gel and anodizing process for high performance thin film capacitors and the properties of the films were studied. The (Ba_0.8Sr_0.2)TiO_3 (BST) films were formed by spin coating and subsequent annealing at 150 550 °C. The respective annealed films were anodized in a neutral borate solution. The capacitance density increased with increasing annealing temperature up to 450°C but decreased at 550 °C. The capacitance density was approximately 28.46% higher with the BST coating than without the BST layer.
机译:利用溶胶-凝胶和阳极氧化工艺制备了高性能薄膜电容器的钛酸锶钡-氧化铝复合材料,并研究了其性能。 (Ba_0.8Sr_0.2)TiO_3(BST)膜是通过旋涂和随后在150 550°C下退火形成的。将各自的退火膜在中性硼酸盐溶液中进行阳极氧化。电容密度随着退火温度的升高而提高,最高到450°C,而在550°C时降低。使用BST涂层的电容密度比不使用BST涂层的电容密度高约28.46%。

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  • 来源
    《Japanese journal of applied physics》 |2011年第7issue1期|p.071502.1-071502.5|共5页
  • 作者单位

    School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;

    School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;

    School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;

    School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;

    School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;

    Division of Materials Science and Engineering, Pukyong National University, Busan 608-739, Republic of Korea;

    School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea,Advanced Materials and Process Research Center for IT, Sungkyunkwan University, Suwon 440-746, Republic of Korea;

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