1/f Noise Characteristics of Fin-Type Field-Effect Transistors in Saturation Region

摘要

In this work, we measured 1/f noise of independent-double-gate- (IDG-) fin-type FET (FinFET) which has two independent gates. Flicker noise of common-double-gate- (CDG-) mode which both gates are applied with the same voltage and IDG-mode that has one gate voltage grounded and the other gate voltage applied with arbitrary voltage, and both result were compared with the same drain current (I_d). First, we measured relationship between characteristic of the normalized 1/f noise by I_d (S_(I_d)I_d~2) and characteristic of I_d. Both the I_d (S_(I_d)I_d~2) of IDG- and CDG-modes show nearly equal values and tendency. Next, this work also shows the relationship between 1/f noise and vertical electric field (E_⊥) of surface of gate oxide film. As a result we could not definitely see a large margin of 1/f noise between CDG- and IDG-modes from E_⊥. This work also discovered that 1/f noise was greatly influenced by I_d density.