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首页> 外文期刊>Japanese journal of applied physics >Surface potential measurement of fullerene/copper phthalocyanine films on indium tin oxide electrode by Kelvin probe force microscopy
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Surface potential measurement of fullerene/copper phthalocyanine films on indium tin oxide electrode by Kelvin probe force microscopy

机译:用开尔文探针力显微镜测量氧化铟锡电极上富勒烯/铜酞菁薄膜的表面电势

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摘要

Various organic semiconductor thin films were deposited on an indium tin oxide (ITO) electrode/glass substrate to simulate organic solar cells. The electrical properties at the organic/inorganic and organic/organic interfaces were evaluated by dynamic-mode atomic force microscopy (DFM) together with Kelvin probe force microscopy (KFM). By employing the frequency modulation (FM) method, the DFM/KFM system allows for not only consistent imaging over a wide scanning area, but also highly sensitive detection of the surface potential. The charge carrier behavior at the interface was clarified by simultaneously obtaining topographic and surface potential images of the same area using DFM/KFM and depicting the energy band diagram with band bending in the fullerene (C_(60)) film.
机译:将各种有机半导体薄膜沉积在氧化铟锡(ITO)电极/玻璃基板上,以模拟有机太阳能电池。通过动态模式原子力显微镜(DFM)和开尔文探针力显微镜(KFM)评估了有机/无机和有机/有机界面处的电性能。通过使用调频(FM)方法,DFM / KFM系统不仅允许在宽扫描区域上进行一致的成像,而且还可以对表面电势进行高度灵敏的检测。通过使用DFM / KFM同时获得相同区域的地形图和表面电势图,并在富勒烯(C_(60))薄膜中描绘了带弯曲的能带图,从而弄清了界面处的载流子行为。

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  • 来源
    《Japanese journal of applied physics 》 |2014年第5s1期| 05FY03.1-05FY03.4| 共4页
  • 作者单位

    Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan,Venture Business Laboratory, Kyoto University, Kyoto 606-8501, Japan;

    Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan,Venture Business Laboratory, Kyoto University, Kyoto 606-8501, Japan;

    Innovative Collaboration Center, Kyoto University, Kyoto 615-8520, Japan;

    Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan,Venture Business Laboratory, Kyoto University, Kyoto 606-8501, Japan;

    Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan;

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