机译:用于Si上低电压和低噪声Ge雪崩光电二极管的Ge / graded-SiGe倍增层
Univ Tokyo, Grad Sch Engn, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan;
NTT Corp, NTT Device Technol Labs, Atsugi, Kanagawa 2430198, Japan|NTT Corp, NTT Nanophoton Ctr, Atsugi, Kanagawa 2430198, Japan;
NTT Corp, NTT Device Technol Labs, Atsugi, Kanagawa 2430198, Japan|NTT Corp, NTT Nanophoton Ctr, Atsugi, Kanagawa 2430198, Japan;
NTT Corp, NTT Device Technol Labs, Atsugi, Kanagawa 2430198, Japan|NTT Corp, NTT Nanophoton Ctr, Atsugi, Kanagawa 2430198, Japan;
NTT Corp, NTT Device Technol Labs, Atsugi, Kanagawa 2430198, Japan|NTT Corp, NTT Nanophoton Ctr, Atsugi, Kanagawa 2430198, Japan;
NTT Corp, NTT Device Technol Labs, Atsugi, Kanagawa 2430198, Japan|NTT Corp, NTT Nanophoton Ctr, Atsugi, Kanagawa 2430198, Japan;
Univ Tokyo, Grad Sch Engn, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan;
Univ Tokyo, Grad Sch Engn, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan;
机译:双倍增层和双电荷层的InP / InGaAs雪崩光电二极管倍增特性的理论研究
机译:P型界面电荷控制层,用于启用GaN / SiC分离吸收和倍增雪崩光电二极管
机译:P型界面电荷控制层,用于启用GaN / SiC分离吸收和倍增雪崩光电二极管
机译:具有厚倍增层和电荷层的InP / InGaAs雪崩光电二极管的倍增特性
机译:单独的吸收,分级,电荷和倍增雪崩光电二极管
机译:高紫外线检测效率的4H-SiC分离吸收电荷和倍增雪崩光电二极管结构的优化策略
机译:分层BI2O2SE雪崩光电二极管的内在载波乘法,增益带宽产品超过1 GHz
机译:低噪声大面积雪崩光电二极管