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Multi-layered hydrogenated p-type microcrystalline silicon windows for a-Si:H thin film solar cells on opaque substrates

机译:不透明基板上用于a-Si:H薄膜太阳能电池的多层氢化p型微晶硅窗口

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摘要

The effects of multi-layered p-type microcrystalline (mu c-) Si:H windows on the performance of substrate-type amorphous Si:H thin film solar cells on opaque substrates were investigated. The results were well explained in terms of H-2-plasma-induced damage (HPID) at the p/i-interface and the near-interface region of the light-absorbing layer. The mu c-Si:H was deposited using plasma enhanced chemical vapor deposition in a H-2-rich atmosphere. A high microcrystalline volume fraction was obtained with a high H-2 dilution ratio, which can cause considerable HPID. Cell efficiency was enhanced with a multi-layered p-type mu c-Si:H composed of films with low and high crystalline volume fraction, compared to cells with single-layered mu c-Si:H. In the multi-layered p-type mu c-Si:H, the low crystalline film was placed on an i-Si:H layer to reduce HPID. The present work demonstrated that HPID was reduced at the p/i-interface and the near-interface region of the light-absorbing layer, and that the quality of the p-type mu c-Si:H needs to be a significant consideration to achieve high efficiency. Copyright (C) 2016, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.
机译:研究了多层p型微晶(mu c-)Si:H窗口对不透明基板上的基板型非晶Si:H薄膜太阳能电池性能的影响。根据光吸收层的p / i界面和近界面区域的H-2-等离子体引起的损伤(HPID),可以很好地解释结果。使用等离子增强化学气相沉积在富含H-2的气氛中沉积mu c-Si:H。以高的H-2稀释比获得了高的微晶体积分数,这会引起大量的HPID。与具有单层mu c-Si:H的电池相比,多层p型mu c-Si:H由具有低和高晶体体积分数的薄膜组成的膜提高了效率。在多层p型mu c-Si:H中,将低结晶膜置于i-Si:H层上以减少HPID。目前的工作表明,在光吸收层的p / i界面和近界面区域HPID降低,并且p型mu c-Si:H的质量需要作为一个重要的考虑因素。实现高效率。 Hydrogen Energy Publications,LLC(C)2016版权所有。由Elsevier Ltd.出版。保留所有权利。

著录项

  • 来源
    《International journal of hydrogen energy》 |2016年第15期|6240-6246|共7页
  • 作者单位

    Elect & Telecommun Res Inst, Informat & Commun Core Technol Res Lab, 218 Gajeongno, Daejeon 305700, South Korea|Univ Sci & Technol, Dept Adv Device Engn, 217 Gajeongno, Daejeon 305350, South Korea;

    Elect & Telecommun Res Inst, Informat & Commun Core Technol Res Lab, 218 Gajeongno, Daejeon 305700, South Korea|Univ Sci & Technol, Dept Adv Device Engn, 217 Gajeongno, Daejeon 305350, South Korea;

    Eindhoven Univ Technol TU E, Dept Appl Phys Plasma & Mat Proc, POB 513, NL-5600 MB Eindhoven, Netherlands;

    Elect & Telecommun Res Inst, Informat & Commun Core Technol Res Lab, 218 Gajeongno, Daejeon 305700, South Korea;

    Elect & Telecommun Res Inst, Informat & Commun Core Technol Res Lab, 218 Gajeongno, Daejeon 305700, South Korea|Univ Sci & Technol, Dept Adv Device Engn, 217 Gajeongno, Daejeon 305350, South Korea;

    Elect & Telecommun Res Inst, Informat & Commun Core Technol Res Lab, 218 Gajeongno, Daejeon 305700, South Korea|Univ Sci & Technol, Dept Adv Device Engn, 217 Gajeongno, Daejeon 305350, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    a-Si; Solar cell; Nip-structure; Multi-layered p-Si; H-2-damage;

    机译:a-Si;太阳能电池;Nip结构;多层p-Si;H-2-损伤;

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