首页> 外文期刊>International journal of hydrogen energy >Facile approach for Z-scheme type Pt/g-C_3N_4/SrTiO_3 heterojunction semiconductor synthesis via low- temperature process for simultaneous dyes degradation and hydrogen production
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Facile approach for Z-scheme type Pt/g-C_3N_4/SrTiO_3 heterojunction semiconductor synthesis via low- temperature process for simultaneous dyes degradation and hydrogen production

机译:Z-Scheme型Pt / G-C_3N_4 / SRTIO_3异质结半导体合成的容易接近通过低温工艺进行同时染料降解和氢气产生

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The platinum/graphite-like carbon nitride/strontium titanate (Pt/g-C3N4/SrTiO3) heterojunction semiconductor was synthesized using a facile approach for simultaneous photocatalytic dye degradation and hydrolysis of hydrogen production from simulated dyeing wastewater. Using SrTiO3, trace Pt, and the addition of an appropriate amount of electron donors, it can effectively absorb sunlight and achieve 93% dye degradation and 471 mu mol h(-1) g(-1) hydrogen yield. The analysis result indicates that the semiconductor is a Z-scheme type composite. It was also showed that the addition of electron donors effectively promoted the degradation rate, whereas the addition of Pt changed the photo-catalytic reaction pathway, which resulted in a reduced degradation rate and a significant improvement of hydrogen evolution. A reaction mechanism for this phenomenon is also proposed. (C) 2020 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.
机译:铂/石墨样氮化物/钛酸锶(Pt / G-C3N4 / SRTIO3)异质结半导体由用于同时光催化染料降解和从模拟染色废水的氢气产生的体外方法合成。使用SRTIO3,痕量Pt和添加适量的电子供体,可以有效地吸收阳光并达到93%的染料降解和471μmolH(-1)g(-1)氢屈服。分析结果表明,半导体是Z方案型复合材料。还表明,电子供体的添加有效地促进了降解速率,而PT的加入改变了光催化反应途径,从而导致降解率降低和氢进化的显着改善。还提出了这种现象的反应机理。 (c)2020氢能源出版物LLC。 elsevier有限公司出版。保留所有权利。

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