Piecewise linear second moment statistical simulation of ICs affected by non-linear statistical effects

摘要

This paper presents a methodology for statistical simulation of non-linear integrated circuits affected by device mismatch. This simulation technique is aimed at helping designers maximize yield, since it can be orders of magnitude faster than other readily available methods, e.g. Monte Carlo. Statistical analysis is performed by modeling the electrical effects of tolerances by means of stochastic current or voltage sources, which depend on both device geometry and position across the die. They alter the behavior of both linear and non-linear components according to stochastic device models, which reflect the statistical properties of circuit devices up to the second order (i.e. covariance functions). DC, AC, and transient analyses are performed by means of the stochastic modified nodal analysis, using a piecewise linear stochastic technique with respect to the stochastic sources, around a few automatically selected points. Several experimental results on significant circuits, encompassing both the analog and the digital domains, prove the effectiveness of the proposed method.