Alow-voltage band-gap reference circuit with second-order analyses

摘要

A new band-gap reference (BGR) circuit employing sub-threshold current is proposed for low-voltage operations. By employing the fraction of Vbe and the sub-threshold current source, the proposed BGR circuit with chip area of 0.029 mm2 was fabricated in the standard 0.18 μm CMOS triple-well technology. It generates reference voltage of 170mV with power consumption of 2.4μW at supply voltage of 1V. The agreement between simulation and measurement shows that the variations of reference voltage are 1.3 mV for temperatures from -20 to 100°C, and 1.1 mV per volt for supply voltage from 0.95 to 2.5 V, respectively.