首页> 外文期刊>International journal of circuit theory and applications >A current-mode MOSFET-C analog filter for the high-frequency band applications
【24h】

A current-mode MOSFET-C analog filter for the high-frequency band applications

机译:用于高频频带应用的电流模式MOSFET-C模拟滤波器

获取原文
获取原文并翻译 | 示例
       

摘要

In this work, a novel current-mode filter is presented including a PMOS grounded capacitor and a metal insulator metal structure (MIM-cap). Proposed filter's cut-off frequency can be easily adjusted from 10 up to 35 MHz. The wide tuning range of the proposed filter is designed to cover the need of baseband filter in the high-frequency band and wireless applications such as CDMA, IEEE802.11a/g, IEEE 802.11b, and IEEE 802.11n. In addition, the proposed filter is designed by using a design methodology employing polynomial regressive models of small signal parameters of transistors to provide design accuracy as high as possible. Designed filter structure has layout with 52.1 mu m x 62.6 mu m chip area, and post-layout simulations are given extensively to prove performance of the filter. Furthermore, 1-dB compression point and IIP3 analyses are highlighted to observe linearity of band-pass output of the filter structure. Also, input-referred noise characteristics of the filter outputs are investigated to overcome thermal noise effects worsening the performance for a wide range of operating frequency interval. Provided results show that the proposed filter scheme brings a promising opportunity to designers for the high-frequency region operations.
机译:在这项工作中,提出了一种新型电流模式滤波器,包括PMOS接地电容器和金属绝缘体金属结构(MIM-CAP)。建议的滤波器的截止频率可以从10到35 MHz轻松调整。所提出的滤波器的宽调谐范围旨在涵盖高频带和无线应用中基带滤波器的需要,例如CDMA,IEEE802.11a / g,IEEE 802.11b和IEEE 802.11n。另外,所提出的滤波器是通过使用晶体管的小信号参数的多项式回归模型的设计方法来设计,以提供尽可能高的设计精度。设计的滤波器结构具有52.1μmx 62.6 mu m芯片区域的布局,并且可以广泛地给出后布局模拟以证明滤波器的性能。此外,突出显示1-DB压缩点和IIP3分析以观察滤波器结构的带通输出的线性度。此外,研究了滤波器输出的输入参考噪声特性,以克服热噪声效果恶化的性能范围广泛的工作频率间隔。提供的结果表明,该拟议的滤波器方案为高频区域操作的设计者带来了一个有希望的机会。

著录项

  • 来源
  • 作者单位

    Natl Def Univ Turkish Air Force Acad Dept Elect Engn Istanbul Turkey|Istanbul Tech Univ Dept Elect & Commun Engn Istanbul Turkey;

    Bandirma Onyedi Eylul Univ Dept Elect & Elect Engn TR-10200 Balikesir Turkey;

    Istanbul Tech Univ Dept Elect & Commun Engn Istanbul Turkey;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号