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Performance improvement of DC-DC converter using L-D- based modified GaN-FET driver

机译:基于L-D的改进的GaN-FET驱动器的DC-DC转换器的性能改进

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摘要

Bootstrap capacitor in FET gate driver plays an important role in the transient performance of the half bridge configured synchronous buck DC-DC converter especially in the top switch. In this paper, a new bootstrap capacitor based GaN-FET driver is proposed. This new GaN-FET driver is tested in a synchronous buck converter for performance verification like dvdt immunity, transient response, and voltage ringing. A comparison study with the existing LM5113 (Texas Instrument)-based driver for GaN-FET and IR2110-based Si-MOSFET driver on a DC-DC converter is carried out to show the performance improvement using the proposed GaN-FET driver. The simulation study is performed on spice-based NI-Multisim 14.1. Finally, the designed GaN-FET driver is tested on a 60-W synchronous buck DC-DC converter in open-loop and closed-loop configuration.
机译:FET栅极驱动器中的引导电容在半桥配置的同步降压DC-DC转换器的瞬态性能中起重要作用,尤其是顶部开关。本文提出了一种新的引导电容基于的GaN-FET驱动器。这款新的GaN-FET驱动器在同步降压转换器中进行了测试,以进行DVDT免疫,瞬态响应和电压振铃等性能验证。对DC-DC转换器上的用于GaN-FET和基于IR2110的SI-MOSFET驱动器的现有LM5113(德克萨斯乐器)驱动器进行比较研究,以显示使用所提出的GaN-FET驱动器的性能改善。对基于香料的Ni-MultiSim 14.1进行了仿真研究。最后,设计的GaN-FET驱动器在开环和闭环配置中在60 W同步降压DC-DC转换器上进行测试。

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