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A memristive dual-slope A/D converter

机译:忆阻双斜率A / D转换器

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摘要

As an emerging device, memristor has several excellent properties like changeable memristance, nonvolatility, and nanoscale. Based on complementary metal-oxide-semiconductor (CMOS) dual-slope analog-to-digital (A/D) converter, this paper proposes a memristive dual-slope A/D converter. Owing to the usage of memristor, the proposed memristive A/D converter not only has more compact circuit structure and simpler control timing than the CMOS one but also has advantages over the existing memristive conversion circuits in circuit design and application. For the memristive A/D converter, a conversion process consists of two count procedures. By means of controlling the memristance change in the two count procedures, the A/D converter converts an analog signal to the corresponding digital count value. Meanwhile, the conversion result is inferred according to the circuit structure of the A/D converter. Then, combining the conversion process and PSPICE simulation, this paper analyzes the anti-interference performance of the A/D converter. Further, the robustness of the A/D converter is presented, applying the similar analysis methods. The analysis results demonstrate that the proposed A/D converter has good anti-interference and robustness performances.
机译:作为新兴的器件,忆阻器具有多种出色的性能,例如可变的忆阻,非易失性和纳米级。基于互补金属氧化物半导体(CMOS)双斜率模数转换器(A / D),提出了一种忆阻双斜率模数转换器。由于使用了忆阻器,所提出的忆阻A / D转换器不仅比CMOS具有更紧凑的电路结构和更简单的控制时序,而且在电路设计和应用方面比现有的忆阻转换电路更具优势。对于忆阻型A / D转换器,转换过程包括两个计数过程。通过控制两个计数过程中的忆阻变化,A / D转换器将模拟信号转换为相应的数字计数值。同时,根据A / D转换器的电路结构来推断转换结果。然后,结合转换过程和PSPICE仿真,分析了A / D转换器的抗干扰性能。此外,采用类似的分析方法,给出了A / D转换器的鲁棒性。分析结果表明,所提出的模数转换器具有良好的抗干扰能力和鲁棒性。

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