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High-Yield Bridged Assembly of ssDNA-Modified SWCNT Using Dielectrophoresis

机译:ssDNA修饰的SWCNT的高电桥组装介电电泳

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摘要

A high-yield, bridged assembly of single-walled carbon nanotubes (SWCNT) was demonstrated using single-strand DNA (ssDNA) modification, dielectrophoresis (DEP), and electroless deposition of gold. ssDNA modification is used for the mono-dispersion of an SWCNT solution for DEP. Gold deposition after DEP was used for the electrical and mechanical clamping of assembled SWCNTs. DEP conditions were investigated, and the best conditions, namely, 2 Vpp, 1 kHz, 1 min for 200-nm gap electrodes, resulted in 8 single-assembly and 19 multiple-assembly SWCNTs between 33 pairs of electrode gaps. The electrical properties of the assembled ssDNA-modified SWCNTs were measured as a back-gate type of FET, and both metallic and semiconducting properties were observed.
机译:使用单链DNA(ssDNA)修饰,介电电泳(DEP)和金的化学沉积,证明了单壁碳纳米管(SWCNT)的高产量,桥联组件。 ssDNA修饰用于SWP DEP溶液的单分散。 DEP之后的金沉积用于组装的SWCNT的电气和机械夹持。研究了DEP条件,最佳条件,即200 nm间隙电极的2 Vpp,1 kHz,1分钟,导致33对电极间隙之间有8个单组件和19个多组件SWCNT。组装的ssDNA修饰的SWCNT的电性能被测量为FET的背栅型,并且观察到金属和半导体性能。

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