机译:烧结温度超低的Zn_2Te_3O_8基陶瓷的流延铸造和介电性能
Microelectronics and Material Physics Laboratories and EMPART Research Group of Infotech Oulu, FI-90014 Oulu, Finland;
Microelectronics and Material Physics Laboratories and EMPART Research Group of Infotech Oulu, FI-90014 Oulu, Finland;
Materials and Minerals Division, NIST, Trivandrum 695019, India;
Materials and Minerals Division, NIST, Trivandrum 695019, India;
Department of Electronics, CUSAT, Cochin 682022, India;
机译:烧结温度超低的SiO_2填充玻璃复合陶瓷的流延成型和介电性能
机译:新型温度稳定Na2MO2O7-Na0.5bi0.5moo4陶瓷的超低温度烧结和微波介电性能
机译:烧结温度超低的(Li_(0.5)Bi_(0.5))(W_(1.-x)Mo_x:)O_4(0.0≤x≤1.0)陶瓷的相演化和微波介电性能
机译:用胶带铸造和热压烧结制造的层压ZRB2-MO5SIB2陶瓷复合材料的加工和性能
机译:通过种子流延铸造生产的织构氮化硅陶瓷的性能。
机译:烧结温度对火花等离子体烧结制备多铁性YFeO3陶瓷的结构介电和磁性能的影响
机译:超低温度烧结和温度稳定的微波电介质(MG1-XZNX)V2O6(X = 0-0.09)陶瓷