COMPONENT DISTRIBUTION IN Ge-Si CRYSTALS GROWN FROM THE MELT

摘要

A one-dimensional problem of component distribution in Ge-Si crystals grown by pulling from the melt is solved with consideration for the dependence of the segregation coefficient on melt composition. The longitudinal Si profiles calculated for various initial melt compositions agree well with experimental data. Based on the results obtained, the conditions for growing Ge-Si crystals of the desired composition can be established. The feasibility of obtaining macroscopically uniform layers of differdnt compositions in one crystal is demonstrated.