STABILIZING EFFECT OF DOPING WITH PbS ON PROPERTIES OF CdS_xSe_1-x WIDE-GAP PHOTOCONDUCTORS

摘要

The resistance-light, spectral ,and frequency characteristics of CdS_xSe_1-x:PbS and CdS_xSe_1-x polycrystalline films were studied before and after irradiation with 20-keV electrons. The steady-state characteristics of the PbS-doped films were found to be more stable toward electron irradiation than those of the undoped films .X-ray diffraction analysis of CdS-PbS films reveals that the introduction of 10 wt PbS into the starting charge increases the lattice constants a and c of hexagonal CdS in the resulting films. Doping with PbS was shown to stabilize the steady-state photoelectric characteristics of the films, wothout affecting the photocurrentdecay time.