ANNEALING OF THERMAL CONORS IN GE-DOPED SILICON

摘要

It was found by Hall effect measurements that Ge, an isovalent impurity in silicon, suppresses annealing of thermal donors in the temperature range 500-520℃. After long term(50 h ) heat treatment at 525℃,the fraction of unannealed thermal donors in Ge-doped Si is lower than that in undoped Si by about a factor of 2. The results are interpreted with consideration for the deformation fields induced in si by the isovalent dopant.