Study on parasitic and channel resistance of poly-Si thin-film transistors by metal-induced crystallization

摘要

The channel-length-dependent transfer characteristics of TFTs using poly-Si by metal-induced crystallization through a cap (MICC) of a-Si to evaluate the parasitic and channel resistances have been studied. The MICC p-channel TFTs studied in the present work showed a maximum field-effect mobility, threshold voltage, and gate swing of 53 cm~2/V-sec, -4.4 V, and 0.8 V/dec for W/L = 12 pm/6 μm, 71 cm~2/V-sec, -5.3 V, and 0.9 V/dec for W/L = 12 μm/12 μm, and 113 cm~2/V-sec, -7 V, and 1 V/dec for W/L = 12 μm/24 μm, respectively. It is found that the parasitic resistance is higher than the channel resistance, and both decrease with increasing temperature.