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Characteristics of MOS-controlled thyristors under zero voltage soft-switching conditions

机译:零电压软开关条件下MOS控制晶闸管的特性

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摘要

During the development of new MOS-controlled thyristors (MCTs), considerable effort has been spent to evaluate and enhance the dynamic performance of MCTs under zero-voltage soft-switching conditions encountered in several resonant converter configurations. The authors summarize key MCT characterization results as they relate to their dynamic performance during zero-voltage switching. Furthermore, a test circuit that enables characterization of the zero-voltage turn-on and turn-off switching losses of the device is proposed. Behavior models are proposed and evaluated to predict the MCT turn-off losses under various soft-switching conditions. These models are useful for both the circuit designer and the device designer in order to optimize device performance in high-frequency, soft-switching converters.
机译:在开发新的MOS控制晶闸管(MCT)的过程中,已花费大量精力来评估和增强MCT在几种谐振转换器配置中遇到的零电压软开关条件下的动态性能。作者总结了关键的MCT表征结果,因为它们与零电压开关期间的动态性能有关。此外,提出了一种测试电路,其能够表征器件的零电压导通和关断开关损耗。提出并评估了行为模型,以预测各种软开关条件下的MCT关断损耗。这些模型对于电路设计者和器件设计者都是有用的,以便优化高频软开关转换器中的器件性能。

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