Constant energy device test for electrostatic discharge (ESD) of semiconductor devices

摘要

An analysis is presented fur the models and test methods used to simulate the electrostatic discharge (ESD) event for a charged semiconductor device. A new constant energy device (CED) test method is proposed to provide control of charge and potential for constant energy discharges and give a better evaluation of device reliability. Experimental results are presented for tests conducted on a basic CMOS structure.