Oxide Thin-Film Transistors Fabricated on Polyimide Film: Bending Stability and Electrical Properties

摘要

The bending stability and electrical properties of In–Ga–Zn–O and In–Sn–Zn–O (ITZO) thin-film transistors (TFTs) fabricated on a polyimide film are described. No significant change in the transfer characteristics of these TFTs was observed under bending at a curvature radius of 1 mm. In addition, back-channel-etched TFTs fabricated on a polyimide film using ITZO, which exhibited a mobility of 28 cm2 /V⋅s for a channel length of 4.8μm , were also developed in an effort to realize future large-sized flexible displays. We discuss the electrical properties of the TFTs based on the dependence of the electrical performance on the channel length for the TFTs.