机译:适用于高频应用的SiC功率MOSFET损耗模型
State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;
Texas A&M University, College Station, TX, USA;
FREEDM Systems Center, North Carolina State University, Raleigh, NC, USA;
North Carolina State University, Raleigh, NC, USA;
State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;
State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;
Power Electronics Laboratory, GE Global Research, Niskayuna, NY, USA;
MOSFET; Silicon carbide; Semiconductor device modeling; Switches; Numerical models; Mathematical model;
机译:用于使用SiC-MOSFET高频逆变器的小外国金属颗粒探测器的铁芯损耗减少的新型感应加热线圈
机译:通过Si IGBT / BiMOSFET实现1700V,50A SiC功率MOSFET的高开关性能,适用于高级功率转换应用
机译:用于超低压RF应用的MOSFET的高频噪声建模
机译:基于SIC MOSFET进行PV应用的升压全桥隔离转换器的功率损耗模型及效率分析
机译:中电压SiC-MOSFET启用的中电压DC应用的功率转换器的设计与控制
机译:用于高频脉冲回波仪表的高压功率放大器的功率MOSFET线性化器
机译:高频调制次级侧自供电隔离式栅极驱动器,用于SiC功率MOSFET的全范围PWM操作