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首页> 外文期刊>Industrial Electronics, IEEE Transactions on >Dead-Time and Semiconductor Voltage Drop Compensation for Cascaded H-Bridge Converters
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Dead-Time and Semiconductor Voltage Drop Compensation for Cascaded H-Bridge Converters

机译:级联H桥转换器的死区时间和半导体压降补偿

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摘要

Compensation of nonlinear effects generated by dead-time and semiconductors voltage drop has been widely studied in the literature about two-level converters. This paper takes a closer look at those analyses for multilevel converters, specifically for a cascaded H-bridge (CHB) converter modulated with phase-shifted pulse width modulation. The interaction between the cells is analyzed for a generic n-cell converter, from which a general expression for the distortion generated by the nonlinearities has been obtained. Based on this expression, a compensation signal for the overall converter is calculated on each sample time, which is a fraction of the triangular carrier used to modulate each cell, thus significantly improving the quality of the output voltage signals. Experimental validation of the proposed compensation method is presented using a three-phase four-cell CHB converter prototype of 5.5 kW.
机译:在两电平转换器的文献中,已经广泛研究了由死区时间和半导体电压降产生的非线性效应的补偿。本文仔细研究了多电平转换器的分析,特别是针对采用相移脉冲宽度调制调制的级联H桥(CHB)转换器的分析。分析了通用n单元转换器的单元之间的相互作用,由此获得了由非线性产生的失真的一般表达式。根据该表达式,可以在每个采样时间上计算出整个转换器的补偿信号,该补偿信号是用于调制每个单元的三角载波的一部分,从而显着提高了输出电压信号的质量。使用5.5 kW的三相四单元CHB转换器原型,对提出的补偿方法进行了实验验证。

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