机译:使用压力触点评估SiC肖特基二极管
School of Engineering, University of Warwick, Coventry, U.K.;
School of Engineering, University of Warwick, Coventry, U.K.;
Power Electronics, Machines and Control Group, University of Nottingham, Nottingham, U.K.;
Computational Mechanics and Reliability Group, University of Greenwich, London, U.K.;
Power Electronics, Machines and Control Group, University of Nottingham, Nottingham, U.K.;
School of Engineering, University of Warwick, Coventry, U.K.;
School of Engineering, University of Warwick, Coventry, U.K.;
Computational Mechanics and Reliability Group, University of Greenwich, London, U.K.;
Silicon carbide; Schottky diodes; Thermal resistance; PIN photodiodes; Silicon; Electronic packaging thermal management;
机译:快速电子辐照前后具有RuWO_x肖特基接触的4H-SiC肖特基二极管的电学特性
机译:具有RuO_2和RuWO_x肖特基触点的4H-SiC肖特基二极管的电学特性
机译:真空退火条件下钌与6H-SiC的固相反应及其对肖特基接触的电性能的影响
机译:肖特基接触对4H-SiC肖特基势垒二极管特性的退火效应
机译:SiC上的肖特基势垒二极管的设计与制造。
机译:具有4H-SIC肖特基二极管的60-700 k CTAT和PTAT温度传感器
机译:使用压力触点评估SiC肖特基二极管
机译:接触金属化和封装技术开发用于siC双极结晶体管,piN二极管和肖特基二极管,专为350°C的长期工作而设计