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首页> 外文期刊>IEICE Transactions on Electronics >A 300-MHz-Band, Sub-1 V and Sub-1 mW CMOS SAW Oscillator Suitable for Use in RF Transmitters
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A 300-MHz-Band, Sub-1 V and Sub-1 mW CMOS SAW Oscillator Suitable for Use in RF Transmitters

机译:适用于RF发送器的300MHz带宽,低于1V和低于1mW的CMOS SAW振荡器

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摘要

An ultra low power CMOS SAW oscillator in the 300-MHz-band that operates on a sub-1 V supply voltage and at sub-1 mW power consumption has been developed. The SAW oscillator is fabricated in a 0.35-μm fully depleted SOI (FD-SOI) process with low voltage operation capability. The SAW oscillator is configured as a type of Colpitts oscillator but consists of 3 cascaded amplifiers instead of a single amplifier. Although the circuit configuration is quite similar to the conventional Colpitts oscillator, this proposed configuration generates an excessively high negative resistance that even exceeds the theoretical limit of the conventional one.
机译:已经开发出一种300MHz频段的超低功耗CMOS SAW振荡器,该振荡器可在低于1V的电源电压和低于1mW的功耗下工作。 SAW振荡器采用0.35μm的全耗尽SOI(FD-SOI)工艺制造,具有低电压工作能力。 SAW振荡器配置为Colpitts振荡器的一种,但由3个级联放大器组成,而不是单个放大器。尽管电路配置与传统的Colpitts振荡器非常相似,但这种提议的配置会产生过高的负电阻,甚至超过了传统的理论极限。

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