Enabling Light Emission from Si Based MOSLED on Surface Nano-Roughened Si Substrate

摘要

The historical review of Taiwan's researching activities on the features of PECVD grown SiO_x are also included to realize the performance of Si nanocrystal based MOSLED made by such a Si-rich SiO_x film with embedded Si nanocrystals on conventional Si substrate. A surface nano-roughened Si substrate with interfacial Si nano-pyramids at SiO_x/Si interface are also reviewed, which provide the capabilities of enhancing the surface roughness induced total-internal-reflection relaxation and the Fowler-Nordheim tunneling based carrier injection. These structures enable the light emission and extraction from a metal-SiO_x-Si MOSLED.