Low-Power Switched Current Memory Cell with CMOS-Type Configuration

摘要

This letter presents a low-power switched current (SI) memory cell with CMOS-type configuration. By combining nMOS and pMOS in the SI memory cell and using a polarity discrimination circuit, we design a CMOS-type SI memory cell which eliminates the quiescent current in the SI memory cell. The simulation result shows that the CMOS-type SI memory cell consumes less power than the conventional class-AB memory cell.