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A 5-bit 4.2-GS/s Flash ADC in 0.13-μm CMOS Process

机译:采用0.13μmCMOS工艺的5位4.2-GS / s闪存ADC

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This paper investigates and analyzes the resistive averaging network and interpolation technique to estimate the power consumption of preamplifier arrays in a flash analog-to-digital converter (ADC). By comparing the relative power consumption of various configurations, flash ADC designers can select the most power efficient architecture when the operation speed and resolution of a flash ADC are specified. Based on the quantitative analysis, a compact 5-bit flash ADC is designed and fabricated in a 0.13-μm CMOS process. The proposed ADC consumes 180 mW from a 1.2-V supply and occupies 0.16-mm~2 active area. Operating at 3.2 GS/S, the ENOB is 4.44 bit and ERBW 1.65 GHz. At 4.2 GS/S, the ENOB is 4.20 bit and ERBW 1.75 GHz. This ADC achieves FOMs of 2.59 and 2.80 pJ/conversion-step at 3.2 and 4.2 GS/s, respectively.
机译:本文研究并分析了电阻平均网络和插值技术,以估算闪存模数转换器(ADC)中前置放大器阵列的功耗。通过比较各种配置的相对功耗,当指定了Flash ADC的运行速度和分辨率时,Flash ADC设计人员可以选择最省电的架构。基于定量分析,以0.13μmCMOS工艺设计和制造了紧凑的5位闪存ADC。拟议的ADC在1.2V电源下消耗180mW的功率,并占用0.16-mm〜2的有效面积。 ENOB工作在3.2 GS / S,为4.44位,ERBW为1.65 GHz。在4.2 GS / S时,ENOB为4.20位,ERBW为1.75 GHz。该ADC在3.2 GS / s和4.2 GS / s时分别实现2.59 pJ /转换步和2.80 pJ /转换步的FOM。

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