机译:采用0.13μmCMOS工艺的5位4.2-GS / s闪存ADC
Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan;
Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan;
Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan;
flash A/D converter; high-speed data converter; interpolation; resistive averaging network;
机译:采用0.13μmCMOS工艺的A5位4.2-GS / s闪存ADC
机译:采用非线性双插值技术的0.13-μm数字CMOS工艺中的嵌入式0.8 V / 480 MW 6b / 22 MHz闪存ADC
机译:一个5位400-MS / S的时间域闪光ADC在0.18-mu M CMOS中
机译:5位4.2-GS / S闪存ADC在0.13-驴MCMOS中
机译:采用65nm CMOS技术的基于时间的低功耗,低失调5位1 Gs / S闪存ADC设计
机译:适用于AlN PMUT阵列的微型0.13μmCMOS前端模拟
机译:具有0.13μmCMOS的闪光灯和SAR ADC的1-V690μW8位200 MS / S闪存SAR ADC