A Dependable SRAM with 7T/14T Memory Cells

摘要

This paper proposes a novel dependable SRAM with 7T/14T memory cells, and introduces a new concept, "quality of a bit (QoB)" tor it. The proposed SRAM has three modes: a normal mode, highspeed mode, and dependable mode, and dynamically scales its reliability, power and speed by combining two memory cells for one-bit information (i.e. 14 T/bit). By carrying out Monte Carlo simulation in a 65-nm process technology, the minimum voltages in read and write operations are improved by 0.21 V and 0.26 V. respectively, with a bit error rate of 10~(-8) kept. In addition, we confirm that the dependable mode achieves a lower bit error rate than the error correction code (ECC) and muhi module redundancy (MMR). Furthermore, we propose a new memory array structure to avoid the half-selection problem in a write operation. The respective cell area overheads in the normal mode are 26% and 11% in the cases where additional transistors are pMOSes and nMOSes, compared to the conventional 6T memory cell.