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首页> 外文期刊>電子情報通信学会技術研究報告 >Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits
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Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits

机译：用于混合自旋电子/ CMOS电路的高级磁性隧道结

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摘要

Magnetic tunnel junctions (MTJs) with highly oriented (001) MgO barrier/CoFeB ferromagnetic electrodes have attracted much interest because of the application to eco-friendly spin devices such as magnetoresisitive random access memories and nonvolatile logics with low-power consumption. We here describe giant tunnel magnetoresistance (TMR) ratio at room temperature (RT) and current-induced magnetization switching (CIMS) at relatively low critical current density J_c for the MgO barrier MTJs.
机译：具有高度取向的（001）MgO势垒/ CoFeB铁磁电极的磁性隧道结（MTJ）引起了人们的极大兴趣，因为它们应用于环保型自旋器件，例如磁阻随机存取存储器和低功耗的非易失性逻辑。我们在此描述了MgO势垒MTJ在相对较低的临界电流密度J_c下，在室温（RT）下的巨隧道磁阻​​（TMR）比和电流感应磁化开关（CIMS）。

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  • 来源
    《電子情報通信学会技術研究報告》 |2009年第97期|p.5-8|共4页
  • 作者

    Shoji IKEDA; JunHAYAKAWA; HuadongGAN; Kotaro MIZUNUMA; Ji Ho PARK; Hiroyuki YAMAMOTO; Katsuya MIURA; Haruhiro HASEGAWA; Ryutaro SASAKI; Toshiyasu MEGURO; Kenchi ITO; Fumihiro MATSUKURA; Hideo OHNO;

  • 作者单位

    Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577 Japan,Advanced Research Laboratory, Hitachi, Ltd. 1-280 Higashi-koigakubo, Kokubunji-shi, Tokyo, 185-8601 Japan;

    Advanced Research Laboratory, Hitachi, Ltd. 1-280 Higashi-koigakubo, Kokubunji-shi, Tokyo, 185-8601 Japan;

    Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577 Japan;

    Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577 Japan;

    Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577 Japan;

    Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577 Japan,Advanced Research Laboratory, Hitachi, Ltd. 1-280 Higashi-koigakubo, Kokubunji-shi, Tokyo, 185-8601 Japan;

    Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577 Japan,Advanced Research Laboratory, Hitachi, Ltd. 1-280 Higashi-koigakubo, Kokubunji-shi, Tokyo, 185-8601 Japan;

    Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577 Japan;

    Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577 Japan;

    Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577 Japan;

    Advanced Research Laboratory, Hitachi, Ltd. 1-280 Higashi-koigakubo, Kokubunji-shi, Tokyo, 185-8601 Japan;

    Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577 Japan;

    Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577 Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    tunnel magnetoresistance; current-induced magnetization switching; MgO; CoFeB; synthetic ferrimagnetic free layer;

    机译：隧道磁阻电流感应磁化切换;氧化镁;钴铁合成铁磁自由层;
  • 入库时间 2022-08-18 00:35:42

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