20W級C-Ku帯広帯域高出力GaN HEMT MMIC増幅器

摘要

GaN HEMTを用いた広帯域増幅器について，分布形増幅器と反射整合形増幅器の高出力・高周波特性の比較について報告する.さらにMMIC構成で小型なGaN HEMT広帯域増幅器を試作した結果，4mm×4.8mmの小さなチップサイズで6～18GHzの3倍帯域の広帯域に渡って平均出力電力20W，平均動作利得9.6B，平均PAE15%が得られた.これは，動作帯域にKu帯を含み比帯域が100%以上の増幅器の条件下で，出力電力および単位面積当たりの出力電力が世界最高である.%This paper reports on a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) Monolithic Microwave Integrated Circuit (MMIC) high power amplifier (HPA), which features high power and high gain over C-Ku band 115 % relative bandwidth.rnA C-Ku band GaN HEMT MMIC amplifier was manufactured and measured. Size of the MMIC HPA was 4mm by 4.8mm. The fabricated MMIC HPA delivered an averaged output power of 20 W with averaged power gain of 9.6dB over C-Ku band. The output power is state-of-the-art high output power for GaN HEMT MMIC amplifiers with more than 100% relative bandwidth and up to Ku band operation frequency.