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首页> 外文期刊>Ultrasonics, Ferroelectrics and Frequency Control, IEEE Transactions on >Large improvement of the electrical impedance of imaging and high-intensity focused ultrasound (HIFU) phased arrays using multilayer piezoelectric ceramics coupled in lateral mode
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Large improvement of the electrical impedance of imaging and high-intensity focused ultrasound (HIFU) phased arrays using multilayer piezoelectric ceramics coupled in lateral mode

机译:使用横向耦合的多层压电陶瓷,成像和高强度聚焦超声(HIFU)相控阵的电阻抗大大提高

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With a change in phased-array configuration from one dimension to two, the electrical impedance of the array elements is substantially increased because of their decreased width (w)-to-thickness (t) ratio. The most common way to compensate for this impedance increase is to employ electrical matching circuits at a high cost of fabrication complexity and effort. In this paper, we introduce a multilayer lateral-mode coupling method for phased-array construction. The direct comparison showed that the electrical impedance of a single-layer transducer driven in thickness mode is 1/(n2(1/(w/t))2) times that of an n-layer lateral mode transducer. A large reduction of the electrical impedance showed the impact and benefit of the lateral-mode coupling method. A one-dimensional linear 32-element 770-kHz imaging array and a 42-element 1.45-MHz high-intensity focused ultrasound (HIFU) phased array were fabricated. The averaged electrical impedances of each element were measured to be 58 :9; at the maximum phase angle of –1.2u000b0; for the imaging array and 105 :9; at 0u000b0; for the HIFU array. The imaging array had a center frequency of 770 kHz with an averaged –6-dB bandwidth of approximately 52%. For the HIFU array, the averaged maximum surface acoustic intensity was measured to be 32.8 W/cm2 before failure.
机译:随着相控阵配置从一维变为二维,由于阵列元件的宽度(w)与厚度(t)之比减小,因此其电阻抗显着增加。补偿这种阻抗增加的最常见方法是采用电匹配电路,但制造成本高昂且费力。在本文中,我们介绍了一种用于相控阵构建的多层横向模式耦合方法。直接比较表明,在厚度模式下驱动的单层换能器的电阻抗是1 /(n 2 (1 /(w / t)) 2 )倍n层横向模式换能器。电阻抗的大幅降低表明了横向模式耦合方法的影响和益处。制作了一维32元素线性770 kHz成像阵列和42元素1.45 MHz高强度聚焦超声(HIFU)相控阵。每个元件的平均电阻抗测得为58:9。在最大相位角为–1.2u000b0时;对于成像阵列和105:9;在0u000b0;用于HIFU阵列。成像阵列的中心频率为770 kHz,平均–6-dB带宽约为52%。对于HIFU阵列,在故障之前,平均最大表面声强测得为32.8 W / cm 2

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