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Fully Integrated Digitally Assisted Low-Dropout Regulator for a NAND Flash Memory System

机译:用于NAND闪存系统的全集成数字辅助低压降稳压器

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In this paper, a fully integrated digitally assisted low-dropout regulator (LDO) for a NAND flash memory system is proposed and verified using 500 nm I/O CMOS transistors. By combining an amplifier (AMP)-based LDO with a comparator (CMP)-based LDO, the proposed LDO achieves both fast load response in the transient state and accurate regulation in the steady state, which are advantages of the CMP-based LDO and AMP-based LDO, respectively. Moreover, loop frequency stability is satisfied in a wide range of load currents between 0 and 150 mA by using the simple structure of the -boost cell to insert an auxiliary path. For an input voltage range of 2.3–3 V and an output voltage of 2.1 V, the measured output droop is 225 mV for a 150 mA load step in the load transition time of 20 ns with the total bias current of . The fabricated prototype chip occupies with an on-chip output capacitor of 2 nF.
机译:本文提出了一种用于NAND闪存系统的全集成数字辅助低压降稳压器(LDO),并使用500nm I / O CMOS晶体管进行了验证。通过将基于放大器(AMP)的LDO与基于比较器(CMP)的LDO相结合,所提出的LDO既可以实现瞬态的快速负载响应,又可以实现稳态下的精确调节,这是基于CMP的LDO和LDO的优势。基于AMP的LDO。此外,通过使用-boost单元的简单结构插入辅助路径,可以在0至150 mA的较大负载电流范围内满足环路频率稳定性。对于2.3–3 V的输入电压范围和2.1 V的输出电压,在20ns的负载转换时间内,对于150mA负载阶跃,测得的输出下降为225mV。所制造的原型芯片占用2 nF的片上输出电容器。

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