机译:在碳化硅MOSFET中实现零开关损耗
Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrate Devices, Chengdu 611731, Sichuan, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrate Devices, Chengdu 611731, Sichuan, Peoples R China;
Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78712 USA;
Texas Instruments Inc, Dallas, TX 75243 USA;
Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78712 USA;
Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78712 USA;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrate Devices, Chengdu 611731, Sichuan, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrate Devices, Chengdu 611731, Sichuan, Peoples R China;
High frequency; minimum turn-ON loss (MTL); SiC MOSFET; zero switching loss (ZSL); zero turn-OFF loss (ZTL);
机译:低温条件下氮化镓和碳化硅MOSFET作为电力开关应用的比较研究
机译:基于仿真的碳化硅功率MOSFET导通和开关损耗的灵敏度分析
机译:温度和开关速率对碳化硅肖特基势垒二极管和MOSFET动态特性的影响
机译:具有合并的肖特基势垒二极管和减少开关损耗的碳化硅分离栅MOSFET
机译:二氧化硅/碳化硅界面的微结构和化学研究及其与碳化硅MOS二极管和碳化硅MOSFET的电学性质的关系。
机译:选择性赛尔增强碳化硅色心的两个紧密链接的零声子跃迁
机译:温度和开关速率对碳化硅肖特基势垒二极管和MOSFET动态特性的影响