...
首页> 外文期刊>IEEE Transactions on Nuclear Science >A fast shaping low power amplifier-comparator integrated circuit for silicon strip detectors
【24h】

A fast shaping low power amplifier-comparator integrated circuit for silicon strip detectors

机译:用于硅条检测器的快速整形低功率放​​大器-比较器集成电路

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

We have designed and tested a 64 channel amplifier-comparator integrated circuit on the Maxim SHPi bipolar process. The low power design, 840 /spl mu/W/channel, is intended for use as a frontend with high clock rate silicon strip detector systems. Peaking time at the comparator input is 20 ns, for good double pulse resolution, and noise is near optimum for the technology used. We have used the chip successfully in a proton beam test at KEK in Japan with a 40 MHz data clock.
机译:我们在Maxim SHPi双极工艺上设计并测试了64通道放大器-比较器集成电路。 840 / spl mu / W /通道的低功耗设计旨在用作高时钟速率硅带检测器系统的前端。比较器输入的峰值时间为20 ns,以获得良好的双脉冲分辨率,并且噪声对于所用技术而言接近最佳。我们已在日本KEK的质子束测试中成功使用了该芯片,并采用了40 MHz数据时钟。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号