Total dose response of a U.H.F. complementary-bipolar process (C-bip) using dielectric isolation (DI/SOI)

摘要

Fast analog signal processing in ionizing radiation environments is today a growing activity for our ASIC design company. To answer this need, we have tested the total-dose response, up to 30 kGy(Si) (3 Mrad(Si)), of the NPN and PNP transistors used in the DI-Cbip UHF process from Harris Semiconductor. Results show a common-emitter current gain (/spl beta/) degradation of approximately 50% at usual current density. Degradation versus total dose exhibits saturation above over 20 kGy(Si) at 36 mGy(Si)/s (3.6 rad(Si)/s).