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One-way equation absorbing boundary conditions for 3-D TLM analysis of planar and quasi-planar structures

机译:平面和准平面结构的3-D TLM分析的吸收边界条件的单向方程

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Absorbing boundary conditions based on one-way wave equations (formulated by Higdon for FD-TD analysis) have been investigated and implemented for the 3-D Symmetrical Condensed Node TLM analysis of dispersive microwave and millimeter-wave structures. Very low reflections over a wide frequency band have been obtained by concatenating two and three first-order boundary operators. Numerical stability of the absorbing boundary conditions with different discretizations of the boundary operators (derivatives) has been studied. It has been found that numerically stable algorithms can be obtained with proper discretizations. These excellent stable absorbing boundary conditions can considerably reduce the computational domain, thus making possible the 3-D TLM analysis of planar and quasi-planar structures with moderate computer resources. The scattering parameters computed using these boundary conditions for microstrip via holes and shorting pins compare well with the available data.
机译:已经研究了基于单向波方程(由Higdon进行FD-TD分析的吸收波边界条件),并将其用于色散微波和毫米波结构的3D对称凝聚节点TLM分析。通过将两个和三个一阶边界算子连接在一起,可以在很宽的频带上获得非常低的反射。研究了边界算子(导数)具有不同离散的吸收边界条件的数值稳定性。已经发现,通过适当的离散化可以获得数值稳定的算法。这些出色的稳定吸收边界条件可以显着减少计算域,从而使具有中等计算机资源的平面和准平面结构的3-D TLM分析成为可能。使用这些边界条件计算的微带通孔和短路销的散射参数与可用数据进行了很好的比较。

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