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Millimeter-wave wide-band amplifiers using multilayer MMIC technology

机译:使用多层MMIC技术的毫米波宽带放大器

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摘要

This paper describes millimeter-wave wide-band single-ended and balanced amplifiers using novel multilayer monolithic microwave/millimeter-wave integrated circuit (MMIC) technology. The fundamental characteristics of thin-film transmission lines and a 50-GHz-band multilayer MMIC directional coupler are described through measurements up to 60 GHz. A single-ended amplifier fabricated in a 1.1 mm/spl times/0.8 mm area, shows a gain of about 12 dB with a noise figure of better than 5 dB around 50 GHz. A balanced amplifier fabricated using the multilayer MMIC directional couplers and single-ended amplifiers, shows a gain of 10-17 dB with input and output return losses of better than 14 dB from 33 to 53 GHz. The transmission lines and directional couplers can be effectively combined with millimeter-wave active circuits without degrading the circuit performance or increasing the circuit area. To our knowledge, these are the first millimeter-wave active circuits employing multilayer MMIC technology.
机译:本文介绍了使用新型多层单片微波/毫米波集成电路(MMIC)技术的毫米波宽带单端和平衡放大器。薄膜传输线和50 GHz频带的多层MMIC定向耦合器的基本特性通过高达60 GHz的测量来描述。在1.1 mm / spl times / 0.8 mm面积中制造的单端放大器显示出约12 dB的增益,在50 GHz周围的噪声系数优于5 dB。使用多层MMIC定向耦合器和单端放大器制造的平衡放大器在10 GHz至33 GHz至53 GHz范围内的输入和输出回波损耗优于14 dB,增益为10-17 dB。传输线和定向耦合器可以有效地与毫米波有源电路结合,而不会降低电路性能或增加电路面积。据我们所知,这是首批采用多层MMIC技术的毫米波有源电路。

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