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A 1-V 3.8 - 5.7-GHz wide-band VCO with differentially tuned accumulation MOS varactors for common-mode noise rejection in CMOS SOI technology

机译:具有差分调谐累积MOS变容二极管的1-V 3.8-5.7-GHz宽带VCO,用于CMOS SOI技术中的共模噪声抑制

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In this paper, a 1-V 3.8 - 5.7-GHz wide-band voltage-controlled oscillator (VCO) in a 0.13-/spl mu/m silicon-on-insulator (SOI) CMOS process is presented. This VCO features differentially tuned accumulation MOS varactors that: 1) provide 40% frequency tuning when biased between 0 - 1 V and 2) diminish the adverse effect of high varactor sensitivity through rejection of common-mode noise. This paper shows that, for differential LC VCOs, all low-frequency noise such as flicker noise can be considered to be common-mode noise, and differentially tuned varactors can be used to suppress common-mode noise from being upconverted to the carrier frequency. The noise rejection mechanism is explained, and the technological advantages of SOI over bulk CMOS in this regard is discussed. At 1-MHz offset, the measured phase noise is -121.67 dBc/Hz at 3.8 GHz, and -111.67 dBc/Hz at 5.7 GHz. The power dissipation is between 2.3 - 2.7-mW, depending on the center frequency, and the buffered output power is -9 dBm. Due to the noise rejection, the VCO is able to operate at very low voltage and low power. At a supply voltage of 0.75 V, the VCO only dissipates 0.8 mW at 5.5 GHz.
机译:本文介绍了采用0.13 / splμ/ m的绝缘体上硅(SOI)CMOS工艺的1-V 3.8-5.7-GHz宽带压控振荡器(VCO)。该VCO具有差分调谐的累积MOS变容二极管,该变容二极管:1)在0-1 V和2 V之间偏置时提供40%的频率调谐; 2)通过抑制共模噪声来减小高变容二极管灵敏度的不利影响。本文表明,对于差分LC VCO,可以将所有低频噪声(例如闪烁噪声)视为共模噪声,并且可以使用差分调谐变容二极管来抑制共模噪声上变频至载波频率。解释了噪声抑制机制,并讨论了SOI在这方面优于块CMOS的技术优势。在1 MHz偏移下,测得的相位噪声在3.8 GHz时为-121.67 dBc / Hz,在5.7 GHz时为-111.67 dBc / Hz。取决于中心频率,功耗在2.3-2.7-mW之间,缓冲的输出功率为-9 dBm。由于噪声抑制,VCO能够以非常低的电压和低功率工作。在0.75 V的电源电压下,VCO在5.5 GHz时仅耗散0.8 mW。

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