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K- and Q-Bands CMOS Frequency Sources With X-Band Quadrature VCO

机译:具有X波段正交VCO的K和Q波段CMOS频率源

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摘要

Fully integrated 10-, 20-, and 40-GHz frequency sources are presented, which are implemented with a 0.18-(mu)m CMOS process. A 10-GHz quadrature voltage-controlled oscillator (QVCO) is designed to have output with a low dc level, which can be effectively followed by a frequency multiplier. The proposed multipliers generate signals of 20 and 40 GHz using the harmonics of the QVCO. To have more harmonic power, a frequency doubler with pinchoff clipping is used without any buffers or dc-level shifters. The QVCO has a low phase noise of -118.67 dBc/Hz at a 1-MHz offset frequency with a 1.8-V power supply. The transistor size effect on phase noise is investigated. The frequency doubler has a low phase noise of -111.67 dBc/Hz at a 1-MHz offset frequency is measured, which is 7 dB higher than a phase noise of the QVCO. The doubler can be tuned between 19.8-22 GHz and the output is -6.83 dBm. A fourth-order frequency multiplier, which is used to obtain 40-GHz outputs, shows a phase noise of -102.0 dBc/Hz at 1-MHz offset frequency with the output power of -18.0 dBm. A large tuning range of 39.3-43.67 GHz (10percent) is observed.
机译:提出了完全集成的10GHz,20GHz和40GHz频率源,这些频率源采用0.18-μmCMOS工艺实现。 10 GHz正交压控振荡器(QVCO)设计为具有低dc电平的输出,可以有效地跟随一个倍频器。建议的乘法器使用QVCO的谐波生成20和40 GHz的信号。为了获得更多的谐波功率,使用了带夹断削波的倍频器,而没有任何缓冲器或直流电平转换器。 QVCO在1.8MHz电源下在1MHz偏移频率下具有-118.67 dBc / Hz的低相位噪声。研究了晶体管尺寸对相位噪声的影响。倍频器在1MHz的偏移频率下具有-111.67 dBc / Hz的低相位噪声,比QVCO的相位噪声高7 dB。倍频器可在19.8-22 GHz之间进行调谐,输出为-6.83 dBm。用于获得40 GHz输出的四阶倍频器在1 MHz偏移频率下具有-102.0 dBc / Hz的相位噪声,输出功率为-18.0 dBm。观察到39.3-43.67 GHz(10%)的大调谐范围。

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