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首页> 外文期刊>Device and Materials Reliability, IEEE Transactions on >Diode-Triggered Silicon-Controlled Rectifier With Reduced Voltage Overshoot for CDM ESD Protection
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Diode-Triggered Silicon-Controlled Rectifier With Reduced Voltage Overshoot for CDM ESD Protection

机译:二极管触发的可控硅整流器,具有降低的过冲电压,可用于CDM ESD保护

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Diode-triggered silicon-controlled rectifiers (DTSCRs) are used for on-chip electrostatic discharge protection. The role of the trigger diode string in determining the transient voltage overshoot is investigated using a very fast transmission line pulse. A DTSCR containing only poly-bound trigger diodes has a voltage overshoot of just 1.5 V at 7 A, which is significantly less than what is found with STI-bound diodes. A DTSCR with only STI-bound trigger diodes has a lower leakage current. Therefore, DTSCRs with different trigger diode configurations may be suitable for different applications, e.g., high speed or low power.
机译:二极管触发的可控硅整流器(DTSCR)用于片上静电放电保护。使用非常快的传输线脉冲来研究触发二极管串在确定瞬态电压过冲中的作用。仅包含多约束触发二极管的DTSCR在7 A时的电压过冲仅为1.5 V,这明显低于STI约束二极管的过冲。仅具有STI约束触发二极管的DTSCR的泄漏电流较低。因此,具有不同触发二极管配置的DTSCR可能适用于不同的应用,例如高速或低功率。

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