机译:离子植入物改性对MTM反熔丝A-Si薄膜电性能的影响
China Elect Technology Grp Corp Key Lab Radiat Hardened Integrated Circuit Res Inst 58 Wuxi 214035 Jiangsu Peoples R China;
China Elect Technology Grp Corp Key Lab Radiat Hardened Integrated Circuit Res Inst 58 Wuxi 214035 Jiangsu Peoples R China;
China Elect Technology Grp Corp Key Lab Radiat Hardened Integrated Circuit Res Inst 58 Wuxi 214035 Jiangsu Peoples R China|Southeast Univ Sch Elect Sci & Engn Nanjing 210096 Peoples R China;
China Elect Technology Grp Corp Key Lab Radiat Hardened Integrated Circuit Res Inst 58 Wuxi 214035 Jiangsu Peoples R China;
China Elect Technology Grp Corp Key Lab Radiat Hardened Integrated Circuit Res Inst 58 Wuxi 214035 Jiangsu Peoples R China;
China Elect Technology Grp Corp Key Lab Radiat Hardened Integrated Circuit Res Inst 58 Wuxi 214035 Jiangsu Peoples R China;
Ions; Silicon; Implants; Dielectrics; Annealing; Ion implantation; Mathematical model; MTM; amorphous silicon (a-Si); breakdown voltage; leakage current;
机译:通过注入Sn {sup} +和Ge {sup} +对磁控溅射a-Si {sub}(1-x)C {sub} x:H薄膜的改性
机译:离子注入对a-Si:H薄膜结构性能的影响
机译:用于光伏应用的倾斜纳米柱非晶硅薄膜的A-Si / C-Si异质结的电气和光伏性能的改善
机译:修改A-Si {sub}(1-x)c {sub} x:h的电子特性通过fe {sup} +离子植入
机译:评估用于金属植入物的溶胶-凝胶陶瓷薄膜:Ti6Al4V上氧化锆薄膜的加工和力学性能研究
机译:氮离子注入SrTiO3薄膜的电和热电性质及其导电机理的调节
机译:SWIFT重离子辐照诱导Mn掺杂SnO 2薄膜的结构,微观结构,电磁性和磁性性质的修饰
机译:碳注入共沉积Fe-Ti薄膜改性高铬工具钢表面力学性能。