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A New 3-D Fuse Architecture to Improve Yield of 3-D Memories

机译:一种新型3D保险丝架构,可提高3D存储器的良率

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摘要

A new 3-D fuse architecture is proposed to improve the yield of 3-D memories. Because the 2-D memories are stacked to form a 3-D memory, the repair status of the prebond is kept as the good status. However, if faults occur in the postbond on the same cells which were repaired in the prebond, they must be identified and repaired because they cannot be repaired by the previous methods. There is no research on the repair the same faulty cells which occur in the prebond and postbond yet. Therefore, the new 3-D fuse architecture is proposed to repair the faulty cells which occur in the prebond and postbond. The redundancies which repair the faulty cells in the prebond are invalidated. The faulty cells are repaired by other redundancies in the postbond by the proposed 3-D fuse architecture. Thus, the proposed technique can improve the yield of 3-D memories. The experimental results show that the proposed technique can achieve higher yields of 3-D memories because only the proposed technique can repair the same faulty cells occurring in the prebond and postbond, and verify the good repair status of the 3-D memories.
机译:提出了一种新的3-D熔丝架构,以提高3-D存储器的良率。因为2-D存储器被堆叠以形成3-D存储器,所以预粘结的修复状态被保持为良好状态。但是,如果在预键合中已修复的同一单元上的键合后发生断裂,则必须对其进行识别和修复,因为以前的方法无法对其进行修复。对于修复在粘结前和粘结后出现的相同故障细胞,尚无研究。因此,提出了新的3-D熔断器架构,以修复出现在预粘结和后粘结中的故障电池。修复预粘结中有缺陷的细胞的冗余失效。提出的3-D熔断器架构可在后键合中通过其他冗余来修复故障单元。因此,提出的技术可以提高3-D存储器的产量。实验结果表明,所提出的技术能够获得更高的3-D存储器产量,因为只有所提出的技术能够修复在键合前和键合后出现的相同故障单元,并验证3-D存储器的良好修复状态。

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