Hybrid MOS-bipolar transistor switching with profiled drive signal

摘要

A method for switching MOS-bipolar transistor hybrids has been developed, which improves the transition performance and minimises the base drive power requirements in a split Darlington configuration with low on-state voltage. The type of wave shaping of the input control signal, enables unusually small and high speed MOSFETs to drive exceptionally high base current pulses for fast turn-on of a bipolar power transistor. Since bipolar over-saturation is avoided, the turn-off is also improved