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首页> 外文期刊>IEEE transactions on circuits and systems . I , Regular papers >Power–Delay–Area–Noise Margin Tradeoffs in Positive-Feedback MOS Current-Mode Logic
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Power–Delay–Area–Noise Margin Tradeoffs in Positive-Feedback MOS Current-Mode Logic

机译:正反馈MOS电流模式逻辑中的功率-延迟-面积-噪声裕度折衷

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摘要

In this paper, positive feedback source-coupled logic (PFSCL) gates are analyzed from a design point of view. The design space is explored through analytical relationships which relate the gate delay, power consumption and noise margin, which are modeled through a simplified circuit analysis. To be more specific, a simple and accurate model of the noise margin is used to derive a systematic design strategy to size the transistors' aspect ratios ensuring an assigned noise margin for a given bias current. From the knowledge of the transistor sizes, the gate delay is then expressed as a function of the bias current and the supply voltage, both of which define the static power consumption of PFSCL gates, as well as of the logic swing, which determines the noise margin. Therefore, this delay model simply relates the speed performance, the power consumption and the noise margin of PFSCL gates, and accounts for the dependence on the fan-in and fan-out. Extensive SPICE simulations with a 0.18-m CMOS process confirm the adequate accuracy of the analytical models and the validity of the approximations introduced to simplify the analysis, and a practical design example of an equality comparator is also presented. In order to derive clear guidelines to manage the delay-power-noise margin tradeoff, PFSCL gates are analyzed in typical design cases (i.e., design for high speed, low power and power efficiency). For the sake of completeness, the effect of each design parameter on the silicon area occupied by a PFSCL gate is also qualitatively analyzed. The resulting criteria are thus useful to design PFSCL gates without resorting to time-consuming design iterations with a trial and error approach based on simulations.
机译:本文从设计的角度分析了正反馈源耦合逻辑(PFSCL)门。通过与栅极延迟,功耗和噪声裕度相关的分析关系来探索设计空间,这些关系通过简化的电路分析来建模。更具体地说,使用简单而准确的噪声容限模型来得出系统的设计策略,以调整晶体管的纵横比,以确保在给定偏置电流下分配有噪声容限。从晶体管尺寸的知识出发,然后将栅极延迟表示为偏置电流和电源电压的函数,二者均定义了PFSCL栅极的静态功耗以及确定噪声的逻辑摆幅。余量。因此,该延迟模型仅关系到PFSCL门的速度性能,功耗和噪声容限,并说明了对扇入和扇出的依赖性。用0.18-m CMOS工艺进行的大量SPICE仿真证实了分析模型的足够准确性以及为简化分析而引入的近似方法的有效性,并给出了一个相等比较器的实际设计示例。为了得出清晰的准则来管理延迟功率噪声余量的折衷,在典型的设计案例(即针对高速,低功率和功率效率的设计)中分析了PFSCL门。为了完整起见,还定性分析了每个设计参数对PFSCL栅极所占硅面积的影响。因此,得出的标准对于设计PFSCL门非常有用,而无需借助基于仿真的反复试验方法进行耗时的设计迭代。

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