首页> 外文期刊>IEEE transactions on circuits and systems . I , Regular papers >A 50-MHz–1-GHz 2.3-dB NF Noise-Cancelling Balun-LNA Employing a Modified Current-Bleeding Technique and Balanced Loads
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A 50-MHz–1-GHz 2.3-dB NF Noise-Cancelling Balun-LNA Employing a Modified Current-Bleeding Technique and Balanced Loads

机译:采用改良的流血技术和平衡负载的50MHz–1GHz 2.3dB NF降噪Balun-LNA

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A new noise-cancelling method that employs a modified current-bleeding (CBLD) technique and balanced loads is presented by developing a design for a low-noise and high-linearity balun-low-noise amplifier (LNA) for broadband applications. The basic common-gate (CG)-common-source (CS) balun topology cannot achieve a noise figure (NF) of less than 3 dB. Thus, a practical topology containing a CS transistor of which the transconductance is N times larger than that of the CC transistor and a CS resistor of which the resistance is N times smaller than that of the CC resistor is often used to decrease the NE However, unsymmetrical load resistors cause a gain and phase imbalance at the differential output. The proposed modified CBLD technique enables the balun-LNA to achieve differential balanced output, low noise, and low-second-order distortion characteristics. The proposed balun-LNA is implemented in 65-nm CMOS technology and covers the frequency range of 50 MHz-1 GHz. It achieves a voltage gain of 30 dB, an S11 of less than -10 dB, an OIP3 of 25.9 dBm, and an OIP2 of 50.6 dBm. The minimum NF is 2.3 dB whereas the average NF is 2.63 dB across the whole band. It operates at a nominal supply voltage of 2.2 V with bias currents of 9 mA. The active die area is 0.0448 mm(2).
机译:通过开发一种适用于宽带应用的低噪声和高线性巴伦低噪声放大器(LNA)的设计,提出了一种采用改进的电流泄漏(CBLD)技术和平衡负载的新型降噪方法。基本的公共门(CG)-公共源(CS)平衡-不平衡变换器拓扑不能实现小于3 dB的噪声系数(NF)。因此,通常使用包含跨导为CC晶体管的N倍的CS晶体管和其电阻为CC电阻的N倍的CS电阻器的实际拓扑来减小NE。不对称的负载电阻会导致差分输出的增益和相位不平衡。所提出的改进的CBLD技术使巴伦-LNA能够实现差分平衡输出,低噪声和低二阶失真特性。拟议的巴伦-LNA采用65 nm CMOS技术实现,覆盖50 MHz-1 GHz的频率范围。它实现了30 dB的电压增益,小于-10 dB的S11、25.9 dBm的OIP3和50.6 dBm的OIP2。整个频带的最小NF为2.3 dB,而平均NF为2.63 dB。它的额定电源电压为2.2 V,偏置电流为9 mA。有效模具面积为0.0448 mm(2)。

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