Comprehensive modeling of diffused quantum-well vertical-cavity surface-emitting lasers

摘要

A numerical model for investigating the thermal, electrical, and optical characteristics of vertical-cavity surface-emitting: lasers (VCSELs) with a diffused quantum-well (QW) structure is presented. In the model, the quasi-three-dimensional (quasi-3-D) distribution of temperature, voltage and optical fields as well as the quasi-two-dimensional (quasi-2-D) diffusion and recombination of carrier concentration inside the QW active layer are calculated in a self-consistent manner. In addition, the quasi-3-D distribution of implanted ions before and after thermal annealing are computed. The variation of electrical conductivity and absorption loss as well as the influence of impurity induced compositional disordering on the optical gain and refractive index of the QW active layer are also taken into consideration. Using this model, the steady-state characteristics of diffused QW VCSELs are studied theoretically. It is shown that significant improvement of stable single-mode operation can be obtained using diffused QW structure.