Impact of thermal effects on Simulation accuracy of nonlinear dynamics in semiconductor lasers

摘要

Simulations based on a carrier heating model are performed to investigate the behavior of a directly modulated 1.55-/spl mu/m InGaAsP distributed feedback (DFB) laser diode (LD). Results show that bandgap shrinkage has a significant effect on the simulated nonlinear behavior of LDs. However, the varying nature of lattice temperature and excess carrier energy relaxation is important to produce simulated results that agree with measured results.